Immersion field guided exposure and post-exposure bake process

ABSTRACT

Methods disclosed herein provide apparatus and method for applying an electric field and/or a magnetic field to a photoresist layer without air gap intervention during photolithography processes. In one embodiment, an apparatus includes a processing chamber comprising a substrate support having a substrate supporting surface, a heat source embedded in the substrate support configured to heat a substrate positioned on the substrate supporting surface, an electrode assembly configured to generate an electric field in a direction substantially perpendicular to the substrate supporting surface, wherein the electrode assembly is positioned opposite the substrate supporting surface having a downward surface facing the substrate supporting surface, wherein the electrode assembly is spaced apart from substrate support defining a processing volume between the electrode assembly and the substrate supporting surface, and a confinement ring disposed on an edge of the substrate support or the electrode assembly configured to retain an intermediate medium.

BACKGROUND Field

The present disclosure generally relates to methods and apparatuses forprocessing a substrate, and more specifically to methods and apparatusesfor improving photolithography processes.

Description of the Related Art

Integrated circuits have evolved into complex devices that can includemillions of components (e.g., transistors, capacitors and resistors) ona single chip. Photolithography may be used to form components on achip. Generally the process of photolithography involves a few basicstages. Initially, a photoresist layer is formed on a substrate. Thephotoresist layer may be formed by, for example, spin-coating. Achemically amplified photoresist may include a resist resin and aphotoacid generator. The photoacid generator, upon exposure toelectromagnetic radiation in the subsequent exposure stage, alters thesolubility of the photoresist in the development process. Theelectromagnetic radiation may have any suitable wavelength, such as awavelength in the extreme ultra violet region. The electromagneticradiation may be from any suitable source, such as, for example, a 193nm ArF laser, an electron beam, an ion beam, or other source. Excesssolvent may then be removed in a pre-exposure bake process.

In an exposure stage, a photomask or reticle may be used to selectivelyexpose certain regions of the substrate to electromagnetic radiation.Other exposure methods may be maskless exposure methods. Exposure tolight may decompose the photo acid generator, which generates acid andresults in a latent acid image in the resist resin. After exposure, thesubstrate may be heated in a post-exposure bake process. During thepost-exposure bake process, the acid generated by the photoacidgenerator reacts with the resist resin, changing the solubility of theresist during the subsequent development process.

After the post-exposure bake, the substrate, and, particularly, thephotoresist layer may be developed and rinsed. Depending on the type ofphotoresist used, regions of the substrate that were exposed toelectromagnetic radiation may either be resistant to removal or moreprone to removal. After development and rinsing, the pattern of the maskis transferred to the substrate using a wet or dry etch process.

The evolution of chip design continually requires faster circuitry andgreater circuit density. The demands for greater circuit densitynecessitate a reduction in the dimensions of the integrated circuitcomponents. As the dimensions of the integrated circuit components arereduced, more elements are required to be placed in a given area on asemiconductor integrated circuit. Accordingly, the lithography processmust transfer even smaller features onto a substrate, and lithographymust do so precisely, accurately, and without damage. In order toprecisely and accurately transfer features onto a substrate, highresolution lithography may use a light source that provides radiation atsmall wavelengths. Small wavelengths help to reduce the minimumprintable size on a substrate or wafer. However, small wavelengthlithography suffers from problems, such as low through put, increasedline edge roughness, and/or decreased resist sensitivity.

In a recent development, an electrode assembly is utilized to generatean electric field to a photoresist layer disposed on the substrate priorto or after an exposure process so as to modify chemical properties of aportion of the photoresist layer where the electromagnetic radiation istransmitted to for improving lithography exposure/developmentresolution. However, inaccurate field strength control of the electricfield generated proximate to the photoresist layer may result ininsufficient electric field energy transmitted to the photoresist layerfor chemical property alternation. Furthermore, undesired voltage dropbetween the substrate and the electrode assembly resulting fromtransmitting from different intermittent medium therebetween may alsoaffect the electric field strength generated to the photoresist layerdisposed on the substrate.

Therefore, there is a need for a method and an apparatus for improvingphotolithography processes with improved control of electric fieldgeneration generated to a photoresist layer.

SUMMARY

Disclosed herein are apparatus and methods for applying an electricfield and/or a magnetic field to a photoresist layer without air gapintervention during photolithography processes. In one embodiment, anapparatus includes a processing chamber comprising a substrate supporthaving a substrate supporting surface, a heat source embedded in thesubstrate support configured to heat a substrate positioned on thesubstrate supporting surface, an electrode assembly configured togenerate an electric field in a direction substantially perpendicular tothe substrate supporting surface, wherein the electrode assembly ispositioned opposite the substrate supporting surface having a downwardsurface facing the substrate supporting surface, wherein the electrodeassembly is spaced apart from substrate support defining a processingvolume between the electrode assembly and the substrate supportingsurface, and a confinement ring disposed on an edge of the substratesupport or the electrode assembly configured to retain an intermediatemedium.

In another embodiment, a processing chamber includes a substrate supportcomprising a substrate supporting surface, an electrode assemblycomprising a first electrode disposed in the substrate support and asecond electrode positioned opposite the substrate supporting surface,the first and the second electrodes defining a processing volumeinbetween configured to generate an electric field in a directionsubstantially perpendicular to the substrate supporting surface, and anintermediate medium positioned in the processing volume.

In yet another embodiment, a method of processing a substrate, themethod includes exposing portions of a photoresist layer disposed on asubstrate to electromagnetic radiation to generate charged species fromphotoacid generator in the photoresist layer and to form substantiallyparallel lines of material in the photoresist layer having differentchemical properties than the portions of the photoresist layer notexposed to the electromagnetic radiation, immersing the photoresistlayer in a non-gas phase intermediate medium without exposure to air,and applying an electric field to the photoresist layer while immersingthe photoresist layer in the intermediate medium.

BRIEF DESCRIPTION OF THE DRAWINGS

So that the manner in which the above recited features of the presentdisclosure can be understood in detail, a more particular description ofthe disclosure, briefly summarized above, may be had by reference toembodiments, some of which are illustrated in the appended drawings. Itis to be noted, however, that the appended drawings illustrate onlytypical embodiments of this disclosure and are therefore not to beconsidered limiting of its scope, for the disclosure may admit to otherequally effective embodiments.

FIG. 1 is a schematic cross-sectional view of an apparatus forprocessing a substrate, according to one embodiment;

FIG. 2 is a top view of embodiment of an electrode assembly of apparatusof FIG. 1;

FIG. 3 is schematic side cross-sectional views of one embodiment of asubstrate support assembly of the apparatus of FIG. 1 having oneembodiment of an electrode assembly embedded therein;

FIGS. 4A-4B are schematic illustration of representations of anintermediate medium that may be used to process a substrate according tothe embodiments disclosed herein;

FIGS. 5A-5B are schematic illustration of representations of anintermediate medium that may be used to process a substrate according tothe embodiments disclosed herein;

FIG. 6 is a schematic illustration of one representative clusterprocessing system that may be used to process a substrate according tothe embodiments disclosed herein; and

FIG. 7 is a flow diagram of a method of processing a substrate,according to one embodiment.

To facilitate understanding, identical reference numerals have beenused, wherever possible, to designate identical elements that are commonto the Figures. Additionally, elements of one embodiment may beadvantageously adapted for utilization in other embodiments describedherein.

DETAILED DESCRIPTION

Methods and apparatuses for minimizing line edge/width roughness andimproving exposure resolution in a photolithography process forsemiconductor applications are provided. The methods and apparatusesdisclosed herein may increase the photoresist sensitivity andproductivity of photolithography processes. The random diffusion ofcharged species generated by a photoacid generator during apost-exposure bake procedure contributes to line edge/width roughnessand reduced resist sensitivity. An electrode assembly may be utilized toapply an electric field and/or a magnetic field to the photoresist layerduring photolithography processes. The field application may control thediffusion of the charged species generated by the photoacid generator.Furthermore, an intermediate medium is utilized between the photoresistlayer and the electrode assembly so as to enhance the electric fieldgenerated therebetween. An air gap defined between the photoresist layerand the electrode assembly may result in voltage drop applied to theelectrode assembly, thus, adversely lowering the level of the electricfield desired to be generated to the photoresist layer. Inaccurate levelof the electric field at the photoresist layer may result ininsufficient or inaccurate voltage power to drive or create chargedspecies in the photoresist layer in certain desired directions, thusleading to diminished line edge profile control to the photoresistlayer. Thus, an intermediate medium is placed between the photoresistlayer and the electrode assembly to prevent an air gap from beingcreated therebetween so as to maintain the level of the electric fieldinteracting with the photoresist layer at a certain desired level. Bydoing so, the charged species generated by the electric field may beguided in a desired direction along the line and spacing direction,preventing the line edge/width roughness that results from inaccurateand random diffusion. Thus, a controlled or desired level of electricfield as generated may increase the accuracy and sensitivity of thephotoresist layer to exposure and/or development process. In oneexample, the intermediate medium may be non-gas phase medium, such as aslurry, gel, liquid solution or a solid state medium that may efficientmaintain voltage level as applied at a determined range whentransmitting from the electrode assembly to the photoresist layerdisposed on the substrate.

FIG. 1 is a schematic cross-sectional view of an apparatus forprocessing a substrate, according to one embodiment. As shown in theembodiment of FIG. 1, the apparatus may be in the form of a vacuumprocessing chamber 100. In other embodiments, the processing chamber 100may not be coupled to a vacuum source. The processing chamber 100 may bean independent processing chamber. Alternatively, the processing chamber100 may be part of a processing system, such as, for example, an in-lineprocessing system, a cluster processing system, or the track processingsystem shown in FIG. 6 (discussed below).

The processing chamber 100 includes chamber walls 102, an electrodeassembly 116, and a substrate support assembly 138. The chamber walls102 include sidewalls 106, a lid assembly 110, and a bottom 108. Thechamber walls 102 at least partially enclose a processing volume 112.The processing volume 112 is accessed through a substrate transfer port(not shown) configured to facilitate movement of a substrate 140 intoand out of the processing chamber 100. In embodiments where theprocessing chamber 100 is part of a processing system, the substratetransfer port may allow for the substrate 140 to be transferred to andfrom a transfer chamber.

A pumping port 114 may optionally be disposed through one of the lidassembly 110, sidewalls 106 or bottom 108 of the processing chamber 100to couple the processing volume 112 to an exhaust port. The exhaust portcouples the pumping port 114 to various vacuum pumping components, suchas a vacuum pump. The pumping components may reduce the pressure of theprocessing volume 112 and exhaust any gases and/or process by-productsout of the processing chamber 100.

The substrate support assembly 138 is centrally disposed within theprocessing chamber 100. The substrate support assembly 138 supports thesubstrate 140 during processing. The substrate support assembly 138 maycomprise a body 124 that encapsulates an optional electrode assembly 118(described in FIG. 3). The body 124 may comprise, for example, a metal,such as aluminum, or a ceramic. In embodiments where the body 124comprises a metal, the electrode assembly 118 may be encapsulated withinan insulating material (not shown) that insulates the electrode assembly118 from the metal body 124. The electrode assembly 118 may be coupledto the power supply 174. In other embodiments, the electrode assembly118 may be coupled to a ground. In some embodiments, the electrodeassembly 118 is configured to generate an electric field parallel to thex-y plane defined by the first surface 134 of the substrate supportassembly 138. For example, the electrode assembly 118 may be configuredto generate an electric field in one of the y direction, x direction orother direction in the x-y plane. In other embodiments, the electrodeassembly 118 is configured to generate an electric field perpendicularto the x-y plane defined by the first surface 134 of the substratesupport assembly 138.

Generally, the substrate support assembly 138 has the first surface 134and a second surface 126. The first surface 134 is opposite the secondsurface 126. The first surface 134 is configured to support thesubstrate 140. The second surface 126 has a stem 142 coupled thereto.The substrate 140 is positioned on the first surface 134 of thesubstrate support assembly 138. The substrate 140 may be any type ofsubstrate, such as a dielectric substrate, a glass substrate, asemiconductor substrate, or a conductive substrate. The substrate 140may have a layer 145 disposed thereon. The layer 145 may be any desiredlayer. In some embodiments, the substrate 140 may have more than onelayer 145. The substrate 140 also has a photoresist layer 150 disposedover the layer 145. The substrate 140 has been previously exposed toelectromagnetic radiation in an exposure stage of a photolithographyprocess. The photoresist layer 150 has latent image lines 155 formedtherein from the exposure stage. The latent image lines 155 may besubstantially parallel. In other embodiments, the latent image lines 155may not be substantially parallel.

In some embodiments, the substrate support assembly 138 may be anelectrostatic chuck. In some embodiments, the body 124 of the substratesupport assembly 138 may encapsulate an embedded heater 132. Theembedded heater 132, such as a resistive element, is disposed in thesubstrate support assembly 138. The embedded heater 132 controllablyheats the substrate support assembly 138 and the substrate 140positioned thereon to a predetermined temperature. The embedded heater132 is configured to quickly ramp the temperature of the substrate 140and to control the temperature of the substrate 140. In someembodiments, the embedded heater 132 is connected to and controlled bythe power supply 174. The power supply 174 may be configured similarlyto the power supply 170, discussed below.

In some embodiments, the processing chamber 100 may include otherheating sources. For example, heat lamps may be positioned within oroutside the processing chamber 100. In some embodiments, one or morelasers may be used to heat the photoresist layer 150 (or other layer)positioned on the substrate 140 or the antennas 220, 221 of theelectrode assembly 116 (shown in FIG. 2). In some embodiments, thesubstrate support assembly 138 may be configured to circulate a highefficiency heat transfer fluid in order to more quickly increase thetemperature of the substrate 140 positioned on the substrate supportassembly 138.

In some embodiments, the substrate support assembly 138 may beconfigured to provide relative motion between the first surface 134 (andthe substrate 140 positioned thereon) and the electrode assembly 116.For example, the substrate support assembly 138 may be configured torotate about the z-axis. The substrate support assembly 138 may beconfigured to continuously or constantly rotate, or the substratesupport assembly 138 may be configured to rotate in a step manner. Forexample, the substrate support assembly 138 may rotate a predeterminedamount, such as 90°, 180°, or 270°, and then rotation may stop for apredetermined amount of time. After the predetermined amount of time,the rotation may continue in a step manner or in a continuous manner.

The substrate support assembly 138 may be configured to move vertically(i.e.) in the z-direction. The substrate support assembly 138 may beseparated from the electrode assembly 116. For example, the substratesupport assembly 138 and the electrode assembly 116 may be separated bya distance of at least about 0.1 mm. A confinement ring 154 is disposedon an edge of the substrate support assembly 138 circumscribing thesubstrate support assembly 138 defining a distance d in the z-directionbetween the first surface 134 of the substrate support assembly 138 andthe electrode assembly 116. The confinement ring 154 may assistmaintaining the substrate 140 positioned at a desired place on the firstsurface 134 of the substrate support assembly 138. Furthermore, theconfinement ring 154 may also confine an intermediate medium, i.e., anon-gas phase medium, such as solid slurry, a gel and/or liquid mediumpositioned, in the processing volume 112 above the photoresist layer 150in place. In one example, the confinement ring 154 may have a length,i.e., the defined distance d, between about 0.5 mm and about 10 mm,sufficient to retain the intermediate medium, e.g., substances and/orliquid medium, at a level that covers an entire surface of thephotoresist layer 150 disposed on the substrate 140 when theintermediate medium is disposed in the processing volume 112.Alternatively, the confinement ring may be disposed on an edge of theelectrode assembly 116, extending downwardly toward an edge of thesubstrate support assembly 138 to assist guiding the substrate 140 in adesired position. In one example, the confinement ring 154 may bemanufactured by a ceramic material, conductive material, dielectricmaterial or other suitable material that are chemically inert to theintermediate medium positioned in the processing volume 112.

In one example, an intermediate medium dispensing tool 173 is disposedin the processing chamber 100 through the chamber walls 102. Theintermediate medium dispensing tool 173 includes a nozzle 171 coupledthereto configured to dispense intermediate medium to the processingvolume 112 confined by the confinement ring 154 above the substrate 140.The intermediate medium dispensing tool 173 is coupled to anintermediate medium source 172, which provides the intermediate mediumto the processing volume 112. Suitable examples of the intermediatemedium includes any suitable liquid, such as water, organic gel, resin,inorganic solution, inorganic gel, slurry, or the like, or any solidmaterial that may be easily melt and later re-solidify to coversubstantially an entire surface of the substrate 140. Details regardingthe intermediate medium that may be used will be described later withreference to FIGS. 4A-5B.

The stem 142 is coupled to a lift system (not shown) for moving thesubstrate support assembly 138 between an elevated processing position(as shown) and a lowered substrate transfer position. The lift systemmay control the position of the substrate 140 in the z-direction. Insome embodiments, the lift system may also be configured to move thesubstrate 140 in the x-direction, the y-direction, or the x-directionand the y-direction. The stem 142 additionally provides a conduit forelectrical and thermocouple leads between the substrate support assembly138 and other components of the processing chamber 100. A bellows 146 iscoupled to the substrate support assembly 138 to provide a vacuum sealbetween the processing volume 112 and the atmosphere outside theprocessing chamber 100 and facilitate movement of the substrate supportassembly 138 in the z-direction.

The lid assembly 110 may optionally include an inlet 180 through whichgases provided by the supply sources 104 may enter the processingchamber 100. The supply sources 104 may optionally controllablypressurize the processing volume 112 with a gas, such as nitrogen,argon, helium, hydrogen, neon, chlorine, other gases, or combinationsthereof. The gases from the supply sources 104 may create a controlledenvironment within the processing chamber 100. In other embodiments, thegases from the supply sources 104 may be used to generate a plasma. Forexample, the plasma may be generated in a remote plasma source 160. Thesupply sources 104 may couple directly to the processing volume 112through a supply conduit 105. In some embodiments, such as shown, theone or more source compounds may indirectly flow into the processingvolume 112. As shown, the one or more source compounds first flowthrough the remote plasma source 160 before flowing into the processingvolume 112.

The remote plasma source 160 may be configured to provide chargedspecies, such as electrons, into the processing volume 112. The remoteplasma source may be, for example, a capacitively coupled plasma sourceor an inductively coupled source. The remote plasma source 160 iscoupled to a power supply 176. The power supply 176 may be, for example,an RF power supply. The power supply 176 may be configured to deliverpower at a frequency of 10 Hz and about 1 MHz, such as about 5 kHz. Inother embodiments, the power supply 176 may be configured to deliverpower at 13.56 MHz. The power supply 176 and the remote plasma source160 may be configured to generate a “soft” plasma. For example, thegenerated plasma may contain charged species having an ion energy ofbetween about 1 eV and about 1000 eV, such as between about 5 eV andabout 50 eV. In some embodiments, the ion energy may be between about 1eV and about 5 eV. Electrons in the soft plasma may be used to drive thecharged species 255 (shown in FIGS. 2A and 2B) generated from thephotoacid generator in the direction perpendicular to the plane of thefirst surface 134. Driving the charged species in the z-direction mayincrease resist sensitivity.

In a representative example using a 300 mm substrate, the soft plasmamay be generated as follows. It is contemplated that the gas flows maybe scaled proportionately to the substrate diameter. Hydrogen gas may beprovided into the remote plasma source 160 at a flow rate of betweenabout 10 sccm and about 1000 sccm. Argon may optionally be flowed intothe remote plasma source 160 at a flow rate of up to about 1000 sccm. Aplasma may be generated in an inductively coupled remote plasma source160 from an RF power of between about 400 W and about 800 W. Thepressure of the processing volume 112 may reduced to at least 10⁻⁵ Torr.For example, the pressure may be reduced to between about 10⁻⁶ Torr andabout 10⁻⁸ Torr. The temperature of the substrate support assembly 138may be maintained from room temperature to about 200° C., such asbetween about 70° C. and about 160° C,for example between about 90° C.and 140° C. as needed.

An actuator 190 may be coupled between the lid assembly 110 and theelectrode assembly 116 to provide relative motion between the electrodeassembly 116 and the substrate support assembly 138. The actuator 190may be configured to move the electrode assembly 116 in one or more ofthe x, y, and z directions. The x and y directions are referred toherein as the lateral directions or dimensions. The actuator 190 enablesthe electrode assembly 116 to scan the surface of the substrate 140. Theactuator 190 also enables the distance d to be adjusted. In someembodiments the electrode assembly 116 is coupled to the lid assembly110 by a fixed stem (not shown). In some embodiments, the actuator 190is configured to rotate the electrode assembly 116 about z-axis. Inother embodiments, the electrode assembly 116 may be coupled to theinside of the bottom 108 of the processing chamber 100, to the secondsurface 126 of the substrate support assembly 138, or to the stem 142.

The electrode assembly 116 includes one or more electrodes. Theelectrode assembly 116 is coupled to the power supply 170. Inembodiments where the electrode assembly 116 includes more than oneelectrode, each electrode may be connected to a power supply. In someembodiments, the electrode assembly 116 is configured to generate anelectric field parallel to the x-y plane defined by the first surface134 of the substrate support assembly 138. For example, the electrodeassembly 116 may be configured to generate an electric field in one ofthe y direction, x direction or other direction in the x-y plane. In oneembodiment, the electrode assembly 116 is configured to generate anelectric field in the x-y plane and in the direction of the latent imagelines 155. In another embodiment, the electrode assembly 116 isconfigured to generate an electric field in the x-y plane andperpendicular to the direction of the latent image lines 155. Theelectrode assembly 116 may additionally or alternatively be configuredto generate an electric field in the z-direction, such as, for example,perpendicular to the first surface 134.

The power supply 170 and/or the power supply 174 may be configured tosupply, for example, between about 500 V and about 100 kV to one or moreelectrodes of the electrode assembly 116 and/or the electrode assembly118. In some embodiments, the power supply 170 and/or the power supply174 are a continuous or pulsed direct current (DC) power supply or acontinuous or pulsed AC power. The pulsed DC wave or AC wave may be froma half-wave rectifier or a full-wave rectifier. The power supply 170and/or the power supply 174 may be configured to provide power at afrequency of between about 10 Hz and about 1 MHz, such as about 5 kHz.The duty cycle of the pulsed DC power or AC power may be between about5% and about 95%, such as between about 20% and about 60%. In someembodiments, the duty cycle of the pulsed DC power or AC power may bebetween about 20% and about 40%. In other embodiments, the duty cycle ofthe pulsed DC power or AC power may be about 60%. The rise and fall timeof the pulsed DC power or AC power may be between about 1 ns and about1000 ns, such as between about 10 ns and about 500 ns. In otherembodiments, the rise and fall time of the pulsed DC power or AC powermay be between about 10 ns and about 100 ns. In some embodiments, therise and fall time of the pulsed DC power or AC power may be about 500ns. In some embodiments, the power supply 170 and/or the power supply174 is an alternating current power supply. In other embodiments, thepower supply 170 and/or the power supply 174 is a direct current powersupply.

As shown, the electrode assembly 116 spans approximately the width ofthe substrate support assembly 138. In other embodiments, the width ofthe electrode assembly 116 may be less than that of the substratesupport assembly 138. For example, the electrode assembly 116 may spanbetween about 10% to about 80%, such as about 20% and about 40%, thewidth of the substrate support assembly 138. In embodiments where thewidth of the electrode assembly 116 is shorter than the width of thesubstrate support assembly 138, the actuator 190 may scan the electrodeassembly 116 across the surface of the substrate 140 positioned on thefirst surface 134 of the substrate support assembly 138. For example,the actuator 190 may scan such that the electrode assembly 116 scans theentire surface of the substrate 140. In other embodiments, the actuator190 may scan only certain portions of the substrate 140. Alternatively,the substrate support assembly 138 may scan underneath the electrodeassembly 116.

In some embodiments, one or more magnets 196 may be positioned in theprocessing chamber 100. In the embodiment shown in FIG. 1, the magnets196 are coupled to the inside surface of the sidewalls 106. In otherembodiments, the magnets 196 may be positioned in other locations withinthe processing chamber 100 or outside the processing chamber 100. Forexample, the magnets 196 may be positioned within the processing chamber100 and adjacent to the bottom 108 and/or the lid assembly 110. Themagnets 196 may be, for example, permanent magnets or electromagnets.Representative permanent magnets include ceramic magnets and rare earthmagnets. In embodiments where the magnets 196 include electromagnets,the magnets 196 may be coupled to a power supply (not shown). Themagnets 196 are configured to generate a magnetic field in a paralleldirection, a perpendicular direction, or other direction relative to theelectric field generated by electrode assembly 116 and/or the electrodeassembly 118. The magnets 196 may be configured to generate a fieldstrength across the first surface 134 of between about 0.1 Tesla (T) andabout 10 T, such as between about 1 T and about 5 T. In embodimentsincluding a magnetic field, the magnets 196 may remain stationary ormove relative to the first surface 134.

FIG. 2 is a top view of embodiments of the electrode assembly 116 ofFIG. 1. In the embodiment shown in FIG. 2, the electrode assembly 116includes at least a first electrode 258 and a second electrode 260. Thefirst electrode 258 includes a first terminal 210, a support structure230, and one or more antennas 220. The second electrode 260 includes asecond terminal 211, a support structure 230, and one or more antennas221. The first terminal 210, the support structure 230, and the one ormore antennas 220 of the first electrode 258 may form a unitary body.Alternatively, the first electrode 258 may include separate portionsthat may be coupled together. For example, the one or more antennas 220may be detachable from the support structure 230. The second electrode260 may similarly be a unitary body or be comprised of separatedetachable components. The first electrode 258 and the second electrode260 may be prepared by any suitable methods. For example, the firstelectrode 258 and the second electrode 260 may be fabricated bymachining, casting, or additive manufacturing.

The support structure 230 may be made from a conductive material, suchas metal. For example, the support structure 230 may be made of one ormore of silicon, polysilicon, silicon carbide, molybdenum, aluminum,copper, graphite, silver, platinum, gold, palladium, zinc, othermaterials, or mixtures thereof. The support structure 230 may have anydesired dimensions. For example, the length L_(S) of the supportstructure 230 may be between about 25 mm and about 450 mm, for example,between about 100 mm and about 300 mm. In some embodiments, the supportstructure 230 has a length L_(S) approximately equal to a diameter of astandard semiconductor substrate. In other embodiments, the supportstructure 230 has a length L_(S) that is larger or smaller than thediameter of a standard semiconductor substrate. For example, indifferent representative embodiments, the length L_(S) of the supportstructure 230 may be about 25 mm, about 51 mm, about 76 mm, about 100mm, about 150 mm, about 200 mm, about 300 mm, or about 450 mm. The widthW_(S) of the support structure 230 may be between about 2 mm and about25 mm. In other embodiments, the width W_(S) of the support structure230 is less than about 2 mm or greater than about 25 mm. The thicknessof the support structure 230 may be between about 1 mm and about 10 mm,such as between about 2 mm and about 8 mm, such as about 5 mm. In otherembodiments the support structure may have a thickness of less thanabout 1 mm or greater than about 10 mm. In some embodiments, the supportstructure 230 may have a cross-section that is square, cylindrical,rectangular, oval, rods, or other shapes. Embodiments having roundexterior surfaces may avoid arcing.

The support structure 231 may be made of the same materials as thesupport structure 230. The support structure 230 and the supportstructure 231 are made of different materials. The lengths L_(S), widthsW_(S), and thicknesses of the support structure 230 and the supportstructure 231 may be the same or different. The one or more antennas 220of the first electrode 258 may also be made from a conductive material.The one or more antennas 220 may be made from the same materials as thesupport structure 230. Each of the antennas 220 may have the samedimensions. Alternatively, some of the one or more antennas 220 may havedifferent dimensions than one or more of the other antennas 220. Theantennas 221 may be made of the same range of materials as the antennas220. The range of dimensions suitable for the antennas 220 is alsosuitable for the antennas 221.

The number of the antennas 220 may be between about 1 and about 40antennas. For example, the number of the antennas 220 may includebetween about 4 and about 40, such as between about 10 and about 20.Each of the antennas 220 may be substantially parallel to each of theother antennas 220. Each of the antennas 221 may be similarly positionedwith respect to the support structure 231 and each other antenna 221. Inone example, the support structure 230 and the support structure 231 arestraight. In other example, the support structure 230 and the supportstructure 231 may not be straight, such as curved, jagged, or have otherprofiles or shapes. In these embodiments, each of the antennas 220 maystill be substantially parallel to each of the other antennas 220.

Each of the antennas 220 has a terminal end 223. Each of the antennas221 has a terminal end 225. A distance C is defined between the supportstructure 230 and the terminal end 225. A distance C′ is defined betweenthe support structure 231 and the terminal end 223. Each of thedistances C and C′ may be between about 1 mm and about 10 mm. A distanceA is defined between facing surfaces of one of the antennas 221 and anadjacent one of the antennas 221. The distance A′ is defined betweenfacing surfaces of one antenna 220 and an adjacent one the antennas 220.The distances A and A′ may be greater than about 6 mm. A distance B isdefined between facing surfaces of one of the antennas 220 and anadjacent one of the antennas 221. The distance B may be, for example,greater than about 1 mm. The strength of an electric field generatedbetween an antenna 220 and an adjacent antenna correlates with thedistance B. For example, a smaller distance B correlates with a strongerelectric field. Accordingly, in embodiments where a stronger electricfield is desired, a smaller distance B may be advantageous.

In operation, the power supply 170 may supply a voltage to the firstterminal 210 and/or a power supply 170′ may provide a voltage to thesecond terminal 211. The power supply 170′ may be substantially similarto the power supply 170. The supplied voltage creates an electric fieldbetween each antenna of the one or more antennas 220 and each antenna ofthe one or more antennas 221. The electric field will be strongestbetween an antenna of the one or more antennas 220 and an adjacentantenna of the one or more antennas 221. The interleaved and alignedspatial relationship of the antennas 220, 221 produces an electric fieldin a direction parallel to the plane defined by the first surface 134.The substrate 140 is positioned on the first surface 134 such that thelatent image lines 155 are parallel to the electric field linesgenerated by the electrode assembly 116. Since the charged species 255are charged, the charged species 255 are affected by the electric field.The electric field drives the charged species 255 generated by thephotoacid generators in the photoresist layer 150 in the direction ofthe electric field. By driving the charged species 255 in a directionparallel with the latent image lines 155, line edge roughness may bereduced. The uniform directional movement is shown by the double headedarrow 270. In contrast, when a voltage is not applied to the firstterminal 210 or the second terminal 211, an electric field is notcreated to drive the charged species 255 in any particular direction. Asa result, the charged species 255 may move randomly, as shown by thearrows 270′. In other embodiments, the substrate 140 may be orienteddifferently relative to the antennas 220, 221. For example, the antennas220, 221 may be parallel to the latent image lines 155.

FIG. 3 are schematic side cross-sectional view of an embodiment of thesubstrate support assembly 138 of FIG. 1 having one embodiment of theelectrode assembly 118 embedded therein. The electrode assembly 118 isembedded between the first surface 134 and the second surface 126 of thebody 124. The electrode assembly 118 has a first surface 334 and asecond surface 326. The first surface 334 and the second surface 326 areopposite each other and substantially parallel to the first surface 134of the substrate support assembly. The first surface 334 of theelectrode assembly 118 is closer than the second surface 326 to thefirst surface 134 of the substrate support assembly 138. The distance Drepresents the distance separating the first surface 134 of thesubstrate support assembly 138 from the first surface 334 of theelectrode assembly. The distance D may be between about 0.1 mm and about100 mm. For example, the distance D may be between about 8 mm and about14 mm. The distance D may control the strength of the electric fieldprovided by the electrode assembly 118 to the first surface 134 and/orthe photoresist layer 150. The strength of the electric field controlsthe rate of diffusion of the charged species 255.

The substrate support assembly 138 has outer side surfaces 348. Theelectrode assembly 118 has outer side surfaces 328. The distance Erepresents a rim between the outer side surfaces 328 and the outer sidesurfaces 348. The distance E may be, for example, any distance suitablefor the distance D. The distance E may be constant around the electrodeassembly 118, or the distance E may vary. The thickness of the electrodeassembly 118 is represented by the distance T_(A). The distance T_(A)may be any suitable thickness for the antennas 220, 221 discussed above.As shown, the electrode assembly 118 is coupled to the power supply 174.The properties of the power supplied by the power supply 174 to theelectrode assembly 118 may be as described above in relation to thepower supply 170 of FIG. 1.

FIG. 4A depicts one example of the substrate support assembly 138 withan intermediate medium 402 disposed in the processing volume 112 andretained by the confinement ring 154 above the substrate 140. Withoutthe intermediate medium 402 positioned in the processing volume 112, anair gap is typically defined in the processing volume 112 between thesubstrate 140 and the electrode assembly 116. The dimension of the airgap defined in the processing volume 112 may be determined by thedistance where the electrode assembly 116 is positioned approximate tothe substrate 140. For example, when the electrode assembly 116 ispositioned close to the photoresist layer 150 disposed on the substrate140, a smaller dimension of the air gap may be defined in the processingvolume 112. In contrast, when the electrode assembly 116 is positionedrelatively far and distanced away from the substrate 140, a largerdimension of the air gap may be defined in the processing volume 112.

It is believed that air medium (i.e., air gap) formed in the processingvolume 112 may adversely result in a voltage drop when a voltage poweris applied to the electrode assemblies 116, 118. As the dielectricconstant in the substrate 140 and in the air are very different, e.g.,approximately 11.7 for the substrate 140 and 1 for air, when the voltagesupplied to the electric assembly 116 to generated an electric field tothe substrate 140, a significant voltage drop is often observed whenvoltage is transmitting through the air gap formed in the processingvolume 112 prior to reaching to the photoresist layer 150 disposed onthe substrate 140. It is believed the low dielectric constant in air,e.g., dielectric constant of 1, significantly changes the voltage levelapplied from the electrode assembly 116. Thus, by inserting a materialwith relatively high dielectric constant, such as greater than 10, toreplace the air gap defined in the processing volume 112, the voltageapplied to form the electric field therein may be maintained at adesired level without significant loss until reaching to the photoresistlayer 150 disposed on the substrate 140. In one example, intermediatemedium 402 placed in the processing volume may be liquid solution, suchas DI water, organic gel, inorganic solution, or other suitable mediumthat has high dielectric constant that can assist maintaining thevoltage level transmitting therethrough without significant voltagedrop. In one example, DI water, e.g., a material having a dielectricconstant about 80, is disposed and placed in the processing volume 112above the substrate support assembly 138 confined by the confinementring 154.

In one example, the intermediate medium 402 may be supplied from theintermediate medium source 172 through the intermediate mediumdispensing tool 173 to substantially fill the processing volume 112. Theintermediate medium 402 disposed in the processing volume 112 may createan interface 404 in a close approximation to a downward surface 406 ofthe electrode assembly 116. After the intermediate medium source 172 isfilled in the processing volume 112, the electrode assembly 116 may belowered down to keep a minimum or negligible distance 407 between theelectrode assembly 116 and the intermediate medium source 172. By doingso, the likelihood of voltage drop caused by the low dielectric constantair gap may be mostly eliminated.

Different materials other than DI water may also be utilized as theintermediate medium source 172 to be filled in the region of theprocessing volume 112 confined by the confinement ring 154, as shown inFIG. 4B. In the example depicted in FIG. 4B, a gel or flowable organicdroplets 410 with a dielectric constant greater than 9 may also be usedto fill in the processing volume 112. The gel or flowable organicdroplets 410 may be spun-on to the substrate 140 until an interface 412of the gel or flowable organic droplets 410 is defined in a closeapproximation to the downward surface 406 of the electrode assembly 116with minimum and/or negligible room for an air gap. Quantity of the gelor flowable organic droplets 410 needed to fill the processing volume112 defined above the substrate support assembly 138 confined by theconfinement ring 154 depends on the geometry of those components. It isnoted that the gel or flowable organic droplets 410 may be continuouslyadded until the processing volume 112 above the substrate issubstantially full without leaving an undesired air gap touching thesurface of the substrate 140.

FIG. 5A depicts another embodiment of the electrode assembly 116 with aconfinement ring 502 disposed on an edge of the electrode assembly 116from its downward surface 406. Instead of liquid medium, a solid statemedium 504 may be utilized to be positioned below and in contact withthe downward surface 406 of the electrode assembly 116 within the areaconfined by the confinement ring 502. After the solid state medium 504is in place, the electrode assembly 116 may then be lowered down by theactuator 190 to have the solid state medium 504 in contact with thephotoresist layer 150 disposed on the substrate 140, as shown in FIG.5B. By carefully selecting the qualities and properties of the solidstate medium 504, e.g., with desired dielectric constant, the solidstate medium 504 serves as a good medium between the electrode assembly116 and the electrode assembly 118 disposed in the substrate supportassembly 138 to maintain the voltage level applied thereto at a desiredrange for electric field generation. In one example, the solid statemedium 504 may be a solid disk having a size that may covers an entiresurface of the photoresist layer 150 disposed on the substrate 140. Thesolid state medium 504 may be attached to the electrode assembly 116 byany suitable techniques, including mechanical bonding or chemicalbonding. The solid state medium 504, when positioned above thephotoresist layer 150, may be placed in a position confined by theconfinement ring 502 in close approximation to the photoresist layer 150with minimum and/or negligible room for an air gap. It is noted that thephrase “negligible room” as described here may be a space less than 10micrometer in dimension. In one example, the solid state medium 504 maybe fabricated from a material with high dielectric constant greater than10. Suitable examples of the solid state medium 504 include quartz orTiO₂.

FIG. 6 depicts illustrates one representative processing system 600 thatmay be used to process a substrate according to embodiments disclosedherein. As shown, the processing system 600 includes a load port 610, acoating chamber 620, a processing chamber 100, an exposure chamber 630(such as a scanner), a second processing chamber 100, a developmentchamber 640, and a post-processing chamber 650. Each chamber of theprocessing system 600 is coupled to each adjacent chamber by a transferchamber 605 or a transfer chamber 615. The transfer chambers 605 and thetransfer chamber 615 may be substantially similar or different.

The load port 610 may be used to introduce or remove substrates into orout of the processing system 600. The coating chamber 620 may be used,for example, for applying a photoresist to a substrate. The coatingchamber 620 may be, for example, a spin coater. The exposure chamber 630may be used for exposing the substrate to electromagnetic energy inorder to form a latent acid image in a photoresist layer on a substrate.The development chamber 640 may be used, for example, for removingportions of the photoresist layer. The post-processing chamber 650 maybe used, for example, to perform a variety of post-processing steps on asubstrate. The processing chamber 100 may be used for a pre-exposurebake, a post-exposure bake, and/or other processing steps. As describedabove, the processing chamber 100 may include one or more electrodeassemblies 118, a remote plasma source 160, and magnets 196. However, itis to be understood that the coating chamber 620, the exposure chamber630, and the development chamber 640 may also be similarly equipped.

FIG. 7 is a flow diagram of a representative method 700 for processing asubstrate, such as the substrate 140. The method 700 for processing thesubstrate 140 has multiple stages. The stages can be carried out in anyorder or simultaneously (except where the context excludes thatpossibility), and the method can include one or more other stages whichare carried out before any of the defined stages, between two of thedefined stages, or after all the defined stages (except where thecontext excludes that possibility). Not all embodiments may include allthe stages.

In general, the method 700 starts at operation 710 by applying aphotoresist containing a photoacid generator to the substrate 140. Atoperation 710, a photoresist is applied to the substrate 140 to form aphotoresist layer 150. The photoresist layer 150 may be applied by, forexample, by spin coating inside a spin coating apparatus, such as thecoating chamber 620 included in the processing system 600. In such anembodiment, the substrate 140 may enter the processing system 600through the load port 610 and thereafter be transferred to the coatingchamber 620 through a transfer chamber 605.

The photoresist may include a solvent, a photoresist resin, and aphotoacid generator. The photoresist resin may be any positivephotoresist resin or any negative photoresist resin. Representativephotoresist resins include acrylates, Novolac resins,poly(methylmethacrylates), and poly(olefin sulfones). Other photoresistresins may also be used.

Prior to the photoresist layer 150 exposed to electromagnetic radiation,the photoacid generator generates charged species 255, such as an acidcation and an anion. The photoacid generator may also generate polarizedspecies. The photoacid generator sensitizes the resin to electromagneticradiation. Representative photoacid generators include sulfonatecompounds, such as, for example, sulfonated salts, sulfonated esters,and sulfonyloxy ketones. Other suitable photoacid generators includeonium salts, such as aryl-diazonium salts, halonium salts, aromaticsulfonium salts and sulfoxonium salts or selenium salts. Otherrepresentative photoacid generators include nitrobenzyl esters,s-triazine derivatives, ionic iodonium sulfonates,perfluoroalkanesulfonates, aryl triflates and derivatives and analogsthereof, pyrogallol derivatives, and alkyl disulfones. Other photoacidgenerators may also be used.

At operation 720, the substrate 140 is then heated by a pre-exposurebaking process. During the pre-exposure baking process, the substrate isheated to partially evaporate the photoresist solvents. The pre-exposurebake at operation 720 and the photoresist application at operation 710may occur in the same chamber or different chambers. For example, bothoperations 710, 720 may occur in a spin coater or the substrate 140 maybe transferred to a different processing chamber. For example, in anembodiment using the processing system 600, the substrate 140 may betransferred from the coating chamber 620 to the processing chamber 100through the transfer chamber 605.

At operation 730, the substrate 140 then transferred to the exposurechamber 630 to expose substrate 140 to electromagnetic radiation for alithographic exposure process. The substrate 140 and portions of thephotoresist layer 150 are exposed to electromagnetic radiation. Duringexposure, portions of the photoresist layer 150 are selectively exposedand portions of the photoresist layer 150 are selectively unexposed.Portions of the photoresist layer 150 exposed to electromagneticradiation may have different chemical properties than the portions ofthe photoresist layer 150 not exposed to the electromagnetic radiation.The charged species 255 generated by the photoacid generator results ina latent acid image in the resist resin. In some embodiments, aphotomask or reticle may be positioned between the photoresist layer150, and the photoresist layer 150 may be exposed to electromagneticradiation through the mask or reticle. The mask or reticle may beconfigured to transfer a pattern containing lines to the photoresistlayer 150. In other embodiments, a pattern containing lines may betransferred to the photoresist layer 150 using maskless lithographytechniques. The transferred latent image lines 155 may have any desiredlength, width, and spacing between latent image lines 155. For example,in some embodiments, the line widths and line spacings may be betweenabout 10 nm and about 16 nm. In other embodiments the line widths andspacings may be less than about 10 nm or greater than about 16 nm. Insome embodiments, the length of the latent image line 155 is about 150%of the width of the latent image line 155. In other embodiments, thelength of the latent image line 155 is greater than about 200% of thewidth of the latent image line 155, such as for example, greater thanabout 1000% of the width of the latent image line 155.

The electromagnetic radiation generally has a wavelength suitable forexposing the photoresist layer 150. For example, the electromagneticradiation may have a wavelength in the extreme ultra violet (EUV) range,such as between about 10 nm and about 124 nm. In other embodiments, theelectromagnetic radiation may be generated by an argon fluoride laser.In such an embodiment, the electromagnetic radiation may have awavelength of about 193 nm. In some embodiments, the wavelength may be248 nm. Other embodiments may use different wavelengths. In someembodiments, the electromagnetic radiation is from an electron beam oran ion beam.

After exposure, at operation 740, the substrate 140 is heated in apost-exposure bake stage for a post-exposure baking process to changethe film properties exposed under electromagnetic radiation at operation740. The substrate 140 may be transferred from the exposure chamber 630to the processing chamber 100 through the transfer chamber 615 for thepost-exposure baking process. The substrate 140 may be positioned on thefirst surface 134 of the substrate support assembly 138. The powersupply 174 may provide power to the embedded heater 132 to heat thesubstrate 140. The embedded heater 132 may quickly heat the substrate140 and the photoresist layer 150. For example, the embedded heater 132may raise the temperature of the photoresist layer 150 from ambienttemperature to between about 70° C. and about 160° C., such as betweenabout 90° C. and 140° C., in less than about 2 seconds.

During the post-exposure bake at operation 740, photoacid generators inthe photoresist layer 150 may continue to alter the chemical propertiesof the exposed portions of the photoresist layer 150. In addition to thebaking process, an electrical field may be generated to the photoresistlayer 150, as described at operation 701, while performing thepost-exposure baking process at operation 740. While applying theelectric field between the electrode assembly 116 and/or the electrodeassembly 118, the charged species 255 may be guided in a desireddirection by at least one of an electric field, a magnetic field, and aplasma. The magnetic field may be generated by, for example, the magnets196. The plasma may be generated by, for example, the remote plasmasource 160. With the utilization of intermediate medium 402, gel orflowable organic droplets 410 or the solid state medium 504 in theprocessing volume 112, the likelihood of voltage drop/loss applying tothe electrode assemblies 116, 118 for electric field generation may besignificantly reduced or eliminated. While generating the electric fieldto the photoresist layer 150, the substrate 140 may or may not have arelative motion to the electrode assemblies 116, 118 as needed to alterthe electric field strength at different locations of the photoresistlayer 150.

As noted above, the charged species 255 may be guided in any operationor in any combination of operations. In some embodiments, the chargedspecies 255 are guided in one direction relative to the latent imagelines 155 in one operation and guided in another direction relative tothe latent image lines 155 in another operation. For example, during theexposure operation 730, the charged species 255 may be guided in adirection perpendicular to the first surface 134, and during thepost-exposure bake operation 740, the charged species 255 may be guidedin the direction of the latent image lines 155 or both in the directionof the latent image lines 155 and in a direction perpendicular to thefirst surface 134. In another embodiment, the charged species may beguided in the direction of the latent image lines 155 or both in thedirection of the latent image lines 155 and in a direction perpendicularto the first surface 134 during the exposure operation 730 and guided ina direction perpendicular to the first surface 134 during thepost-exposure bake at operation 740. In some embodiments, the chargedspecies 255 may be guided in different directions within a single phase.For example, in an exposure operation or during a post-exposure bakeoperation, the charged species 255 may be guided in a directionperpendicular to the first surface 134 for a portion of the stage andguided in a direction perpendicular to the first surface 134 and in adirection along the direction of the latent image lines for a portion ofthe stage. Such a variation in guided direction may be achieved bytoggling the magnetic field on and off while applying a verticalmagnetic field.

Subsequently, at operation 750, a development process is performed tothe areas exposed or not exposed to electromagnetic radiation from thesubstrate 140 to develop the photoresist layer. In one embodiment, afteroperation 740, the substrate 140 is transferred to a develop chamber,such as the develop chamber 640 depicted in FIG. 6. In embodiments usingthe processing system 600, the substrate 140 may be transferred from theprocessing chamber 100 to the development chamber 640 through thetransfer chamber 605. The development chamber 640 may also include theelectrode assembly 116 coupled to one or more power supplies and/or theactuator 190 and magnets 196. The substrate 140 may be positioned in thedevelopment chamber 640 relative to the electrode assembly 116 andmagnets 196 as described in relation to the coating chamber 620.

During operation 750, the photoresist layer 150 may be developed by, forexample, exposing the photoresist layer 150 to a developer, such as asodium hydroxide solution, a tetramethylammonium hydroxide solution,xylene, or Stoddard solvent. The substrate 140 may be rinsed with, forexample, water or n-butylacetate. After the development process atoperation 750, the latent image lines 155 may no longer be latent. Thelines 155 on the substrate 140 will have less line edge/width roughnesscompared to conventional techniques.

Subsequently, at operation 760, a post-treatment process may beperformed on the substrate 140 to post-treat the substrate after thedevelopment process. The post-processing process may be performed, forexample, in the post-processing chamber 650 depicted in FIG. 6. In anembodiment using the processing system 600, the substrate 140 may betransferred from the development chamber 640 through the transferchamber 605 to the post-processing chamber 650 for post-processing. Forexample, after rinsing, the substrate 140 may be hard baked andinspected. After inspection, an etching process may be performed on thesubstrate 140. The etching process uses the features of photoresistlayer 150, such as the lines 155, to transfer a pattern to the layer145.

While performing the processes of applying the photoresist layer on thesubstrate at operation 710, heating the substrate at operation 720,exposing the substrate to electromagnetic radiation at operation 730,heating the substrate at operation 740, developing the substrate atoperation 750, and post-treating the substrate at operation 760, avoltage may be applied to generate an electric field, as indicated atoperation 701, to guild the charged species 255 generated by thephotoacid generator in a desired direction, such as a direction parallelto the x-y plane and in the direction of the latent image lines 155, adirection parallel to the x-y plane and perpendicular to the latentimage lines 155, a different direction, or combinations thereof. Withthe intermediate medium 402, the gel or flowable organic droplets 410 orthe solid state medium 504 placed in between the electrode assembly 116and the substrate 140 to avoid possible air gap defined therebetween,voltage applied thereto to generate the electric field may then bemaintained at a desired level without undesired voltage drop or loss.

The previously described embodiments have many advantages, including thefollowing. For example, the embodiments disclosed herein may reduce oreliminate voltage drop/loss while applying an electric field between anelectrode assembly and a photoresist layer disposed on a substrate forline edge/width roughness reduction. The reduction or elimination ofvoltage drop/loss may be obtained by utilizing intermediate medium 402,a gel or flowable organic droplets 410 or a solid state medium 504placed in between the electrode assembly 116 and the substrate 140 toavoid possible air gap defined therebetween. The aforementionedadvantages are illustrative and not limiting. It is not necessary forall embodiments to have all the advantages.

While the foregoing is directed to embodiments of the presentdisclosure, other and further embodiments of the disclosure may bedevised without departing from the basic scope thereof, and the scopethereof is determined by the claims that follow.

What is claimed is:
 1. An apparatus for processing a substrate, theapparatus comprising: a processing chamber, the processing chambercomprising: a substrate support having a substrate supporting surface; aheat source embedded in the substrate support configured to heat asubstrate positioned on the substrate supporting surface; an electrodeassembly configured to generate an electric field in a directionsubstantially perpendicular to the substrate supporting surface, whereinthe electrode assembly is positioned opposite the substrate supportingsurface having a downward surface facing the substrate supportingsurface, wherein the electrode assembly is spaced apart from substratesupport defining a processing volume between the electrode assembly andthe substrate supporting surface; and a confinement ring disposed on anedge of the substrate support or the electrode assembly configured toretain an intermediate medium.
 2. The apparatus of claim 1, wherein theintermediate medium is configured to be disposed in the processingvolume.
 3. The apparatus of claim 1, wherein the intermediate mediumpositioned in the processing volume is in close approximation to thesubstrate supporting surface and the downward surface of the electrodeassembly.
 4. The apparatus of claim 1, wherein the processing chamber iscoupled to a remote plasma source.
 5. The apparatus of claim 1, whereinthe processing chamber comprises an electromagnetic energy sourceconfigured to perform a photolithography process.
 6. The apparatus ofclaim 1, further comprising: an intermediate medium dispensing tooldisposed in the processing chamber configured to dispense theintermediate medium in the processing volume.
 7. The apparatus of claim1, wherein the intermediate medium is DI water.
 8. The apparatus ofclaim 1, wherein the intermediate medium has a dielectric constantgreater than
 10. 9. The apparatus of claim 1, wherein the intermediatemedium is a solid state medium.
 10. The apparatus of claim 1, whereinthe intermediate medium is quartz.
 11. The apparatus of claim 1, whereinthe intermediate medium is substantially filled in the processing volumedefined between the electrode assembly and the substrate supportingsurface without air gap.
 12. The apparatus of claim 1, wherein theconfinement ring disposed on the edge of the electrode assembly isconfigured to retain the intermediate medium when the electrode assemblyis actuated to a processing position.
 13. An apparatus for processing asubstrate, the apparatus comprising: a processing chamber, theprocessing chamber comprising: a substrate support comprising asubstrate supporting surface; an electrode assembly comprising a firstelectrode disposed in the substrate support and a second electrodepositioned opposite the substrate supporting surface, the first and thesecond electrodes defining a processing volume inbetween configured togenerate an electric field in a direction substantially perpendicular tothe substrate supporting surface; and an intermediate medium positionedin the processing volume.
 14. The apparatus of claim 13, furthercomprising: a heating element disposed in the substrate support.
 15. Theapparatus of claim 13, further comprising: an intermediate mediumdispensing tool disposed in the processing chamber configured todispense the substance or liquid medium in the processing volume. 16.The apparatus of claim 13, further comprising: a confinement ringdisposed on an edge of the substrate support or an edge of the secondelectrode configured to retain the intermediate medium.
 17. Theapparatus of claim 13, wherein the intermediate medium is DI water. 18.The apparatus of claim 13, wherein the intermediate medium has adielectric constant greater than
 10. 19. A method of processing asubstrate, the method comprising: exposing portions of a photoresistlayer disposed on a substrate to electromagnetic radiation to generatecharged species from photoacid generator in the photoresist layer and toform substantially parallel lines of material in the photoresist layerhaving different chemical properties than the portions of thephotoresist layer not exposed to the electromagnetic radiation;immersing the photoresist layer in a non-gas phase intermediate mediumwithout exposure to air; and applying an electric field to thephotoresist layer while immersing the photoresist layer in theintermediate medium.
 20. The method of claim 19, wherein applying theelectric field to the photoresist layer further comprises: heating thesubstrate while immersing the photoresist layer in the non-gas phaseintermediate medium.